NTLJD3182FZTBG【PDF 1/8 页】MOSFET P-CH 20V 2.2A 6-WDFN

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NTLJD3182FZ

Power MOSFET and

Schottky Diode

? 20 V, ? 4.0 A, m Cool t Single P ? Channel

& Schottky Barrier Diode, ESD

Features

? WDFN 2x2 mm Package with Exposed Drain Pads for Excellent

Thermal Conduction

? Lowest R DS(on) Solution in 2x2 mm Package

? Footprint Same as SC ? 88 Package

? Low Profile (< 0.8 mm) for Easy Fit in Thin Environments

? ESD Protected

? High Current Schottky Diode: 2 A Current Rating

? This is a Pb ? Free Device

Applications

? Optimized for Battery and Load Management Applications in

Portable Equipment

? Li ? Ion Battery Charging and Protection Circuits

? DC ? DC Buck Circuit

MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)

V (BR)DSS

? 20 V

V R Max

20 V

http://onsemi.com

P ? CHANNEL MOSFET

R DS(on) Max

100 m W @ ? 4.5 V

144 m W @ ? 2.5 V

200 m W @ ? 1.8 V

SCHOTTKY DIODE

V F Max

0.47 V

S A

I D Max

? 4.0 A

I F Max

2.0 A

Parameter

Symbol

Value

Unit

Drain ? to ? Source Voltage

Gate ? to ? Source Voltage

V DSS

V GS

? 20

± 8.0

Continuous Drain

Current (Note 1)

Steady

State

t ≤ 5s

T A = 25 ° C

T A = 85 ° C

T A = 25 ° C

I D

? 3.2

? 2.3

? 4.0

MARKING

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 2)

Power Dissipation

(Note 2)

Steady

State

t ≤ 5s

Steady

State

T A = 25 ° C

T A = 85 ° C

T A = 25 ° C

P D

I D

P D

1.5

2.3

? 2.2

? 1.6

0.71

P ? CHANNEL MOSFET SCHOTTKY DIODE

WDFN6 1 6

Pin 1

DIAGRAM

CASE 506AN 2 JJM G 5

3 G 4

Pulsed Drain Current t p = 10 m s

Operating Junction and Storage Temperature

Source Current (Body Diode) (Note 2)

Lead Temperature for Soldering Purposes

(1/8 ″ from case for 10 s)

I DM

T J , T STG

I S

T L

? 16

? 55 to

150

? 1.0

260

° C

JJ = Specific Device Code

M = Date Code

G = Pb ? Free Package

(Note: Microdot may be in either location)

PIN CONNECTIONS

SCHOTTKY MAXIMUM RATINGS (T J = 2 5 ° C unless otherwise stated)

Parameter Symbol Value Unit

Peak Repetitive Reverse Voltage

DC Blocking Voltage

V RRM

V R

N/C

Average Rectified Forward Current I F 2.0 A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Top View)

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[2 oz] including traces).

2. Surface Mounted on FR4 Board using the minimum recommended pad size,

(30 mm 2 , 2 oz Cu).

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

? Semiconductor Components Industries, LLC, 2008

December, 2008 ? Rev. 0

Publication Order Number:

NTLJD3180PZ/D

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